Diamond A New Materials Base for Future Ultra High Power RF Electronics
نویسنده
چکیده
Diamond is an ideal semiconductor material for high power / high temperature electronic systems with active device structures and MEMS components. Despite the difficult materials and device technology, individual transistor structures and passive components have been realized, allowing to extract first encouraging microwave performance data. A critical issue is still the availability of single crystal substrates. The state of the art of both groups of devices (active and passive) is reviewed together with the materials requirements for ultra high power RF applications.
منابع مشابه
Diamond semiconductor technology for RF device applications
This paper presents a comprehensive review of diamond electronics from the RF perspective. Our aim was to find and present the potential, limitations and current status of diamond semiconductor devices as well as to investigate its suitability for RF device applications. While doing this, we briefly analysed the physics and chemistry of CVD diamond process for a better understanding of the reas...
متن کاملUltra-Sharpening of Diamond Stylus by 500 eV O+/O2 + Ion Beam Machining without Facet and Ripple Formation
The price of single point diamond tools with a sharp tip is very high due to complex machining process and highly expensive machining equipments. Yet, the performance is not quite satisfactory. In this paper, we have presented a very simple and cost effective machining process for the sharpening and polishing of diamond stylus using low energy reactive ion beam machining (RIBM). In our method, ...
متن کاملEffect of Cyclotrimethylenetrinitramine on the WetSynthesis of Ultra-nanocrystalline Diamond
The Ultra-nanocrystalline diamond (UNCD) was synthesized by the detonation of a high explosive mixture in water confinement. The presence of a diamond phase was revealed by X-ray diffraction (XRD) and transmission electron microscopy (TEM). X-ray line broadening (XRLB) was used to evaluate the peak profiles of diamond nanoparticles and their corresponding average crystallite sizes. The micro st...
متن کاملA Novel Very High Performance CMOS Current Mirror with extremely low input and ultra high output resistance
In this paper a novel very high performance current mirror is presented. It favorably benefits from such excellent parameters as: Ultra high output resistance (36.9GΩ), extremely low input resistance (0.0058Ω), low output (~0.18V) and low input voltage (~0.18V) operation, very low power consumption (20μW), very low offset current (1pA), ultra wide current dynamic range (150dB), and ultra high a...
متن کاملA New Ultra-Wideband Low Noise Amplifier With Continuous Gain Control
This paper presents a new variable gain low noise amplifier (VG-LNA) for ultra-wideband (UWB) applications. The proposed VG-LNA uses a common-source (CS) with a shunt-shunt active feedback as an input stage to realize input matching and partial noise cancelling. An output stage consists of a gain-boosted CS cascode and a gain control circuit that moves the high resonant frequency to higher freq...
متن کامل